BE561650A - - Google Patents

Info

Publication number
BE561650A
BE561650A BE561650DA BE561650A BE 561650 A BE561650 A BE 561650A BE 561650D A BE561650D A BE 561650DA BE 561650 A BE561650 A BE 561650A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE561650A publication Critical patent/BE561650A/xx
Priority claimed from GB26446/53A external-priority patent/GB745698A/en
Priority claimed from GB806657A external-priority patent/GB831216A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/02—Elemental selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/046—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE561650D 1953-09-25 BE561650A (en])

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB26446/53A GB745698A (en) 1953-09-25 1953-09-25 Improvements in or relating to methods of producing silicon of high purity
GB806657A GB831216A (en) 1957-03-12 1957-03-12 Manufacture of pure silicon

Publications (1)

Publication Number Publication Date
BE561650A true BE561650A (en]) 1900-01-01

Family

ID=26241885

Family Applications (4)

Application Number Title Priority Date Filing Date
BE561650D BE561650A (en]) 1953-09-25
BE565604D BE565604A (en]) 1953-09-25
BE561654D BE561654A (en]) 1953-09-25
BE532054D BE532054A (en]) 1953-09-25

Family Applications After (3)

Application Number Title Priority Date Filing Date
BE565604D BE565604A (en]) 1953-09-25
BE561654D BE561654A (en]) 1953-09-25
BE532054D BE532054A (en]) 1953-09-25

Country Status (7)

Country Link
US (1) US2987139A (en])
BE (4) BE532054A (en])
CH (1) CH373741A (en])
DE (1) DE1065389B (en])
FR (3) FR67266E (en])
GB (1) GB829422A (en])
NL (2) NL112548C (en])

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3053631A (en) * 1956-08-04 1962-09-11 Int Standard Electric Corp Methods of producing silicon of high purity
NL241272A (en]) * 1958-07-14
DE1154796B (de) * 1958-12-16 1963-09-26 Western Electric Co Verfahren zum Reinigen von Silicium- oder Germaniumverbindungen
US3116132A (en) * 1960-01-22 1963-12-31 Olin Mathieson Process for the adsorption and desorption of diborane
BE632401A (en]) * 1962-06-15
DE1260439B (de) * 1964-02-08 1968-02-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
US4099936A (en) * 1976-12-16 1978-07-11 Union Carbide Corporation Process for the purification of silane
US4532120A (en) * 1983-12-28 1985-07-30 Ethyl Corporation Silane purification process
DE3805282A1 (de) * 1988-02-19 1989-08-31 Wacker Chemitronic Verfahren zur entfernung von n-dotierenden verunreinigungen aus bei der gasphasenabscheidung von silicium anfallenden fluessigen oder gasfoermigen stoffen
US5290342A (en) * 1990-12-05 1994-03-01 Ethyl Corporation Silane compositions and process
US5211931A (en) * 1992-03-27 1993-05-18 Ethyl Corporation Removal of ethylene from silane using a distillation step after separation using a zeolite molecular sieve
US6251182B1 (en) * 1993-05-11 2001-06-26 Hemlock Semiconductor Corporation Susceptor for float-zone apparatus
US6204180B1 (en) 1997-05-16 2001-03-20 Advanced Technology Materials, Inc. Apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing sorbent-based fluid storage and dispensing system for reagent delivery
US6083298A (en) * 1994-10-13 2000-07-04 Advanced Technology Materials, Inc. Process for fabricating a sorbent-based gas storage and dispensing system, utilizing sorbent material pretreatment
US5707424A (en) * 1994-10-13 1998-01-13 Advanced Technology Materials, Inc. Process system with integrated gas storage and delivery unit
US5518528A (en) * 1994-10-13 1996-05-21 Advanced Technology Materials, Inc. Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds
US5704967A (en) * 1995-10-13 1998-01-06 Advanced Technology Materials, Inc. Fluid storage and delivery system comprising high work capacity physical sorbent
US6132492A (en) * 1994-10-13 2000-10-17 Advanced Technology Materials, Inc. Sorbent-based gas storage and delivery system for dispensing of high-purity gas, and apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing same
US5916245A (en) * 1996-05-20 1999-06-29 Advanced Technology Materials, Inc. High capacity gas storage and dispensing system
US5676735A (en) * 1996-10-31 1997-10-14 Advanced Technology Materials, Inc. Reclaiming system for gas recovery from decommissioned gas storage and dispensing vessels and recycle of recovered gas
US6027547A (en) * 1997-05-16 2000-02-22 Advanced Technology Materials, Inc. Fluid storage and dispensing vessel with modified high surface area solid as fluid storage medium
US6019823A (en) * 1997-05-16 2000-02-01 Advanced Technology Materials, Inc. Sorbent-based fluid storage and dispensing vessel with replaceable sorbent cartridge members
US5851270A (en) * 1997-05-20 1998-12-22 Advanced Technology Materials, Inc. Low pressure gas source and dispensing apparatus with enhanced diffusive/extractive means
US5985008A (en) * 1997-05-20 1999-11-16 Advanced Technology Materials, Inc. Sorbent-based fluid storage and dispensing system with high efficiency sorbent medium
US5980608A (en) * 1998-01-07 1999-11-09 Advanced Technology Materials, Inc. Throughflow gas storage and dispensing system
US6660063B2 (en) 1998-03-27 2003-12-09 Advanced Technology Materials, Inc Sorbent-based gas storage and delivery system
US6406519B1 (en) * 1998-03-27 2002-06-18 Advanced Technology Materials, Inc. Gas cabinet assembly comprising sorbent-based gas storage and delivery system
US6070576A (en) * 1998-06-02 2000-06-06 Advanced Technology Materials, Inc. Adsorbent-based storage and dispensing system
US7105037B2 (en) * 2002-10-31 2006-09-12 Advanced Technology Materials, Inc. Semiconductor manufacturing facility utilizing exhaust recirculation
US6991671B2 (en) 2002-12-09 2006-01-31 Advanced Technology Materials, Inc. Rectangular parallelepiped fluid storage and dispensing vessel
USD545393S1 (en) 2002-12-09 2007-06-26 Advanced Technology Materials, Inc. Rectangular parallelepiped fluid storage and dispensing vessel
US6743278B1 (en) 2002-12-10 2004-06-01 Advanced Technology Materials, Inc. Gas storage and dispensing system with monolithic carbon adsorbent
US8002880B2 (en) 2002-12-10 2011-08-23 Advanced Technology Materials, Inc. Gas storage and dispensing system with monolithic carbon adsorbent
US7494530B2 (en) * 2002-12-10 2009-02-24 Advanced Technology Materials, Inc. Gas storage and dispensing system with monolithic carbon adsorbent
KR101159674B1 (ko) * 2009-11-16 2012-06-25 주식회사 케이씨씨 모노실란의 정제방법
US8679231B2 (en) 2011-01-19 2014-03-25 Advanced Technology Materials, Inc. PVDF pyrolyzate adsorbent and gas storage and dispensing system utilizing same
WO2013181295A1 (en) 2012-05-29 2013-12-05 Advanced Technology Materials, Inc. Carbon adsorbent for hydrogen sulfide removal from gases containing same, and regeneration of adsorbent

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1667426A (en) * 1921-11-14 1928-04-24 Gen Norit Company Ltd Gas-treating process
US1825707A (en) * 1927-05-24 1931-10-06 Silica Gel Corp Method of adsorbing a gas in a solid adsorbent
GB745698A (en) * 1953-09-25 1956-02-29 Standard Telephones Cables Ltd Improvements in or relating to methods of producing silicon of high purity

Also Published As

Publication number Publication date
BE561654A (en]) 1900-01-01
FR72288E (fr) 1960-03-31
NL112548C (en]) 1900-01-01
BE565604A (en]) 1900-01-01
FR67266E (fr) 1958-02-19
GB829422A (en) 1960-03-02
FR70026E (fr) 1959-02-02
US2987139A (en) 1961-06-06
DE1065389B (de) 1959-09-17
BE532054A (en]) 1900-01-01
NL225733A (en]) 1900-01-01
CH373741A (de) 1963-12-15

Similar Documents

Publication Publication Date Title
AT12969B (en])
AT12659B (en])
AT11620B (en])
AT14123B (en])
AT13658B (en])
AT10914B (en])
AT13049B (en])
AT12729B (en])
AT11895B (en])
AT11927B (en])
AT13288B (en])
AT11591B (en])
AT1693B (en])
AT12104B (en])
AT12123B (en])
AT12140B (en])
AT12178B (en])
AT12322B (en])
AT12375B (en])
AT12399B (en])
AT12417B (en])
AT12431B (en])
AT12637B (en])
AT11569B (en])
AT12708B (en])